Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon films

نویسندگان

  • S. C. Ray
  • C. W. Bao
  • H. M. Tsai
  • J. W. Chiou
  • J. C. Jan
  • K. P. Krishna Kumar
  • W. F. Pong
  • J. A. McLaughlin
چکیده

This work investigates the C K-edge x-ray absorption near-edge structure (XANES), valence-band photoelectron spectroscopy (PES), and Fourier transform infrared (FTIR) spectra of Si-doped hydrogenated amorphous carbon films. The C K-edge XANES and valence-band PES spectra indicate that the sp2 /sp3 population ratio decreases as the amount of tetramethylsilane vapor precursor increases during deposition, which suggest that Si doping% enhances sp3 and reduces sp2-bonding configurations. FTIR spectra show the formation of a polymeric sp3 C–Hn structure and Si–Hn bonds, which causes the Young’s modulus and hardness of the films to decrease with the increase of the Si content. © 2004 American Institute of Physics. [DOI: 10.1063/1.1812594]

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تاریخ انتشار 2004